NGTB40N120FL3: Ultra Field Stop IGBT -1200V 40A

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Features
  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices
Applications
  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
End Products
  • Industrial
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT - Ultra Field StopNGTB40N120FL3W/D (153kB)1May, 2016
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-247340AL (32.3kB)C
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
NGTB40N120FL3WGActivePb-free Halide freeTO-247340ALNATube30Contact BDTIC
Specifications
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB40N120FL3WG1200401.731.11.68612212454Yes
IGBT - Ultra Field Stop (153kB) NGTB40N120FL3
TO-247 NGTG40N120FL2