SiC MOSFET SCT2280KE

基于SiC的平面型MOSFET:(SiC-SBD非一体型) 其特征是高耐压、低导通电阻、高速开关。 SCT2280KE

型号Status封装包装数量最小独立包装数量包装形态RoHS
SCT2280KEC供应中TO-24736030TubeYes

SCT2280KE 数据手册 Data Sheet

技术特性
Drain-source Voltage[V]1200
Drain-source On-state Resistance(Typ.)[mΩ]280
Drain Current[A]14.0
Total Power Dissipation[W]108
Junction Temperature(Max.)[°C]175
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]175
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引脚配置图
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