LET9060F：60W 28V HF to 2GHz LDMOS TRANSISTOR in flangeless package
The LET9060F is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9060F is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT (@ 28 V)= 60 W with 18 dB gain @ 945 MHz
- POUT (@ 36 V)= 90 W with 18 dB gain @ 945 MHz
- BeO free package
- In compliance with the 2002/95/EC european directive
产品规格
应用手册
HW Model & CAD Libraries
简报
宣传册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
样片和购买
| 型号 | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| LET9060F | 1000 | 58.5 | M250 | Loose Piece | NEC | EAR99 | MOROCCO |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| LET9060F | M250 | Industrial | Ecopack1 | |
