M48Z08：5 V, 64 Kbit (8 Kb x 8) ZEROPOWER® SRAM
The M48Z08/18 ZEROPOWER®RAM is an 8 K x 8 non-volatile static RAM which is pin and function compatible with the DS1225.
The monolithic chip provides a highly integrated battery-backed memory solution.
The M48Z08/18 is a non-volatile pin and function equivalent to any JEDEC standard 8 K x 8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special write timing or limitations on the number of writes that can be performed.
The 28-pin, 600 mil DIP CAPHAT™houses the M48Z08/18 silicon with a long-life lithium button cell in a single package.
Key Features
- Integrated, ultra low power SRAM and power-fail control circuit
- Unlimited WRITE cycles
- READ cycle time equals WRITE cycle time
- Automatic power-fail chip deselect and WRITE protection
- WRITE protect voltages (VPFD
= power-fail deselect voltage):
- M48Z08: VCC = 4.75 to 5.5 V; 4.5 V ≤ VPFD ≤ 4.75 V
- M48Z18: VCC = 4.5 to 5.5 V; 4.2 V ≤ VPFD ≤ 4.5 V
- Self-contained battery in the CAPHAT™ DIP package
- Pin and function compatible with JEDEC standard 8 K x 8 SRAMs
- RoHS compliant
- Lead-free second level interconnect
产品规格
| Description | Version | Size |
|---|---|---|
| DS0498: 5 V, 64 Kbit (8 Kb x 8) ZEROPOWER® SRAM | 8.1 | 302 KB |
应用手册
| Description | Version | Size |
|---|---|---|
| AN1011: ST NVRAM 和实时时钟（RTC）产品中使用的电池技术 | 4.0 | 416 KB |
| AN1009: Negative undershoot NVRAM data corruption | 2.0 | 82 KB |
| AN1012: 预测NVRAM 和串行RTC 的电池寿命和数据保存期限 | 4.1 | 813 KB |
Product Certifications
| Description | Version | Size |
|---|---|---|
| Products Underwriter Laboratories (UL) Information | 2.1 | 162 KB |
样片和购买
| 型号 | Package | Packing Type | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|---|---|
| M48Z08-100PC1 | PDIP 28 .7 | Tube | - | - | 10.229 | 1000 | NEC | EAR99 | MALAYSIA |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| M48Z08-100PC1 | PDIP 28 .7 | Industrial | Ecopack1 | md_n9-wspc-pdip-wspc-28-wspc-.7-wspc-zero-wspc-power_hzpcm6aaz08-wspc-(m48z08-100pc1).pdf md_n9-wspc-pdip-wspc-28-wspc-.xml |
- circuit_diagram_2424_thumbnail.png M48Z18
- ST NVRAM 和实时时钟（RTC）产品中使用的电池技术 M4Z28-BR00SH
- Negative undershoot NVRAM data corruption M48Z58Y
- 预测NVRAM 和串行RTC 的电池寿命和数据保存期限 M4Z28-BR00SH
- Predicting the battery life and data retention period of NVRAMs and serial RTCs M48Z58Y
- md_n9-wspc-pdip-wspc-28-wspc-.7-wspc-zero-wspc-power_hzpcm6aaz08-wspc-(m48z08-100pc1).pdf M48Z08
- md_n9-wspc-pdip-wspc-28-wspc-.xml M48Z58Y
