SCT30N120:Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Key Features

  • Very tight variation of on-resistance vs. temperature
  • Very high operating temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance
产品规格
DescriptionVersionSize
DS9011: Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package10.0794 KB
应用手册
DescriptionVersionSize
AN4671: 如何调整碳化硅 MOSFET 驱动减少功率损耗1.1608 KB
AN3152: The right technology for solar converters1.4416 KB
Technical Notes & Articles
DescriptionVersionSize
TA0349: Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs2.22 MB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
SCT30N120 PSpice model2.06 KB
宣传册
DescriptionVersionSize
SiC MOSFETs: The real breakthrough in high-voltage switching2.01 MB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
会议文章
DescriptionVersionSize
Cost benefits of a SiC MOSFET-based high frequency converter1.01 MB
Wide bandgap materials: revolution in automotive power electronics1.0792 KB
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
SCT30N120HiP247 IN LINETube221000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
SCT30N120HiP247 IN LINEIndustrialEcopack2md_a0t7-wspc-hip247-wspc-in-wspc-line_a0t7c12b0y3-wspc-(sct30n120)-wspc-wcp-wspc-ver2_signed.pdf
md_a0t7-wspc-hip247-wspc-in-wspc-line_a0t7c12b0y3-wspc-(sct30n120)-wspc-wcp-wspc-ver2.xml
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package SCT30N120
如何调整碳化硅 MOSFET 驱动减少功率损耗 SCTWA50N120
The right technology for solar converters SCTWA50N120
Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs SCTWA50N120
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs SCT30N120
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs SCTWA50N120
md_a0t7-wspc-hip247-wspc-in-wspc-line_a0t7c12b0y3-wspc-(sct30n120)-wspc-wcp-wspc-ver2_signed.pdf SCT30N120
md_a0t7-wspc-hip247-wspc-in-wspc-line_a0t7c12b0y3-wspc-(sct30n120)-wspc-wcp-wspc-ver2.xml SCT30N120