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STHV748：Quad ±90 V, ±2 A, 3/5 levels, high-speed ultrasound pulser

This monolithic, high-voltage, high-speed pulser generator features four independent channels. It is designed for medical ultrasound imaging applications, but it can also be used for driving other piezoelectric, capacitive or MEMS based transducers. The STHV748 comprises a controller logic interface circuit, level translators, MOSFET gate drivers, noise blocking diodes, and high-power P-channel and N-channel MOSFETs as the output stage for each channel, clamping-to-ground circuitry, anti-leakage, anti-memory effect block, thermal sensor, and a T/R switch which guarantees an effective decoupling during the transmission phase. Moreover, the STHV748 includes self-biasing and thermal shutdown blocks. Each channel can support up to five active output levels with two half bridges. The output stage of each channel is able to provide ±2 A peak output current. In order to reduce power dissipation during continuous wave mode, a dedicated half bridge is available and the peak current is limited to 0.6 A.

Key Features

• 0 to ±90 V output voltage
• Up to 20 MHz operating frequency
• Embedded low-power, floating high-voltage drivers (external voltage rails can be also used)
• Mode operations:
  • 3/5-levels output waveform
  • ±2 A source and sink current
  • Down ≤ 20 ps jitter
  • Anti-cross conduction function
  • Low 2nd harmonic distortion
• Fully integrated clamping-to-ground function
  • 8 Ω synchronous active clamp
  • Anti-leakage on output node
• Dedicated half bridge for continuous wave (CW) operations
  • ≤ 0.1 W power consumption
  • ±0.6 A source and sink current
  • 205 fs RMS jitter [100 Hz-20 kHz]
• Fully integrated T/R switch
  • 13.5 Ω on resistance
  • HV MOS topology to minimize current consumption
  • Up to 300 MHz BW
  • Receiver multiplexing function
• 2.4 V to 3.6 V CMOS logic interface
• Auxiliary integrated circuits
  • Noise blocking diodes
  • Fully self-biasing architecture
  • Anti-memory effect for all internal HV nodes
  • Thermal protection
  • Standby function
• Latch-up free due to HV SOI technology
• Very few external passive components needed

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