STRH100N6:Rad-Hard N-Channel 60V, 40A MOSFET

This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET™ process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects.This Power MOSFET is fully ESCC qualified.

Key Features

  • Fast switching
  • 100% avalanche tested
  • Hermetic package
  • 50 krad TID
  • SEE radiation hardened
产品规格
DescriptionVersionSize
DS7071: Rad-Hard N-channel, 60 V, 40 A Power MOSFET9.0900 KB
Technical Notes & Articles
DescriptionVersionSize
TN1188: Chip storage and handling for aerospace products with silver backside2.0331 KB
TN1181: Engineering Model quality level1.1142 KB
HW Model & CAD Libraries
DescriptionVersionSize
STRH100N6 beginning of life PSpice model (.lib)2.11 KB
选型指南
DescriptionVersionSize
Aerospace and Hi-rel - ESCC, JANS & QML products1.02 MB
样片和购买
型号SMD PIN/Detailed SpecQuality LevelEPPLHi-Rel PackageLead FinishPacking TypePackage: Product MarkingMass (gr)ECCN (EU)ECCN (US)Country of Origin
STRH100N6HY1-Engineering Model-TO-254AAGoldCarrier TapeSTRH100N6HY1 + BeO10NECEAR99FRANCE
STRH100N6HYT5205/022/02ESCC Flight-TO-254AASolder DipCarrier Tape520502202F + BeO10NECEAR99FRANCE
STRH100N6HYG5205/022/01ESCC Flight-TO-254AAGoldCarrier Tape520502201F + BeO10NECEAR99FRANCE
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STRH100N6HY1TO254 AA EMIndustrialN/A
STRH100N6HYTTO254 AA FPIndustrialN/A
STRH100N6HYGTO254 AA FPIndustrialN/A
Rad-Hard N-channel, 60 V, 40 A Power MOSFET STRH100N6
Chip storage and handling for aerospace products with silver backside STRH12P10
Engineering Model quality level 1N5822U
Engineering Model quality level STRH100N6
Engineering Model quality level 1N5822U