STRH40P10:Rad-Hard P-Channel 100 V - 40A MOSFET

This P-channel Power MOSFET is developed with STMicroelectronics unique STripFET™ process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects.

This Power MOSFET is fully ESCC qualified.

Key Features

  • Fast switching
  • 100% avalanche tested
  • Hermetic package
  • 100 krad TID
  • SEE radiation hardened
产品规格
DescriptionVersionSize
DS7072: Rad-Hard P-channel 100 V, 34 A Power MOSFET14.0740 KB
Technical Notes & Articles
DescriptionVersionSize
TN1188: Chip storage and handling for aerospace products with silver backside2.0331 KB
TN1181: Engineering Model quality level1.1142 KB
HW Model & CAD Libraries
DescriptionVersionSize
STRH40P10 beginning of life PSpice model (.lib)2.11 KB
选型指南
DescriptionVersionSize
Aerospace and Hi-rel - ESCC, JANS & QML products1.02 MB
样片和购买
型号SMD PIN/Detailed SpecQuality LevelEPPLHi-Rel PackageLead FinishPacking TypePackage: Product MarkingMass (gr)ECCN (EU)ECCN (US)Country of Origin
STRH40P10HYG5205/025/01ESCC FlighttrueTO-254AAGoldCarrier Tape520502501R + BeO10NECEAR99FRANCE
STRH40P10HY1-Engineering Model-TO-254AAGoldCarrier TapeSTRH40P10HY1 + BeO10NECEAR99FRANCE
STRH40P10HYT5205/025/02ESCC Flight-TO-254AASolder DipCarrier Tape520502502R + BeO-NECEAR99FRANCE
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STRH40P10HYGTO254 AA FPIndustrialN/A
STRH40P10HY1TO254 AA EMIndustrialN/A
STRH40P10HYTTO254 AA FPIndustrialN/A
Rad-Hard P-channel 100 V, 34 A Power MOSFET STRH40P10
Chip storage and handling for aerospace products with silver backside STRH12P10
Engineering Model quality level 1N5822U
Engineering Model quality level STRH40P10
Engineering Model quality level 1N5822U