STRH8N10：Rad-Hard N-Channel 100V - 6A MOSFET

This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET™process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects.

This Power MOSFET is fully ESCC qualified.

Key Features

  • Fast switching
  • 100% avalanche tested
  • Hermetic package
  • 50 krad TID
  • SEE radiation hardened
产品规格
DescriptionVersionSize
DS7120: Rad-Hard 100 V, 6 A N-channel Power MOSFET7.0742 KB
Technical Notes & Articles
DescriptionVersionSize
TN1188: Chip storage and handling for aerospace products with silver backside2.0331 KB
TN1181: Engineering Model quality level1.1142 KB
HW Model & CAD Libraries
DescriptionVersionSize
STRH8N10 beginning of life PSpice model (.lib)3.11 KB
选型指南
DescriptionVersionSize
Aerospace and Hi-rel - ESCC, JANS & QML products1.02 MB
样片和购买
型号SMD PIN/Detailed SpecQuality LevelEPPLHi-Rel PackageLead FinishPacking TypePackage: Product MarkingMass (gr)ECCN (EU)ECCN (US)Country of Origin
STRH8N10S1-Engineering Model-SMD.5GoldCarrier Tape--NECEAR99FRANCE
STRH8N10SG5205/023/01ESCC Flight-SMD.5GoldCarrier Tape--NECEAR99FRANCE
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STRH8N10S1SMD.5 parallel seam welding EMIndustrialN/A
STRH8N10SGSMD.5 parallel seam welding FPIndustrialN/A
Rad-Hard 100 V, 6 A N-channel Power MOSFET STRH8N10
Chip storage and handling for aerospace products with silver backside STRH12P10
Engineering Model quality level 1N5822U
Engineering Model quality level STRH8N10
Engineering Model quality level 1N5822U
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