IGB30N60H3

Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies.

Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

ParametricIGB30N60H3
Budgetary Price €€/1k1.08
Switching FrequencyHighSpeed3 20-100 kHz
PackageD2PAK (TO-263)
VCE  max600.0V
IC (@ 100°)  max30.0A
IC (@ 25°)  max60.0A
ICpuls  max120.0A
Ptot  max187.0W
VCE(sat)1.95V
Eon0.73mJ
Eoff0.44mJ
td(on)18.0ns
tr22.0ns
td(off)207.0ns
tf22.0ns
QGate165.0nC
Sales Product NameIGB30N60H3
OPNIGB30N60H3ATMA1
Product Statusactive and preferred
Package NamePG-TO263-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size1000
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • Loss reduction in resonant circuits
  • Temperature stable behavior
  • Parallel switching capability
  • Tight parameter distribution
  • E off optimized for IC =1A
Target Applications:
  • SMPS
Target Applications:
  • SMPS
Summary of Features:
  • Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
  • Low switching losses for high efficiency
  • Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, meaning further improvement in switching losses
  • Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
  • Short circuit capability
  • Offering T j(max) of 175°C
  • Packaged with and without freewheeling diode for increased design freedom
Benefits:
  • Excellent cost/performance
  • Low switching and conduction losses
  • Very good EMI behavior
  • A small gate resistor for reduced delay time and voltage overshoot
  • Smaller die sizes -> smaller packages
  • Best-in-class IGBT efficiency and EMI behavior
Target Applications:
  • Welding Inverters
  • Solar Inverters
  • UPS
  • All hard switching applications
Data Sheet
TitleSizeDateVersion
IGB30N60H3,EN1.6 MB06 Aug 201002_03
Application Notes
TitleSizeDateVersion
Application Note Discrete IGBT Datasheet Explanation；EN1.6 MB01 Oct 201501_00
Application Note IGBT Definition of Junction Temperature；EN84 KB09 Apr 2009
600V high current HighSpeed 3 IGBT optimized for high-switching speed；EN426 KB22 Jan 2013
Recommendations for Assembly of Infineon TO Packages；EN1.1 MB09 Apr 2009
Description: IGBT (Insulated Gate Bipolar Transistor)；EN625 KB19 Jun 2010
The Reverse Behavior of the NPT-IGBT in its On-State；EN167 KB19 Jun 2010
Connecting IGBTs in Parallel (Fundamentals)；EN97 KB19 Jun 2010
Recommendations for Screw Tightening Torque for IGBT Discrete Devices；EN983 KB29 Nov 2013
第三代高速 (HighSpeed 3) 1200V IGBT - 高开关速度优化的新一代IGBT系列；CN1.4 MB26 Aug 2013
Product Brief
TitleSizeDateVersion
The new 1200V and 600V IGBT HighSpeed 3 family, optimized in every respect；EN454 KB04 Jun 2013
Product Family Overview
TitleSizeDateVersion
HighSpeed 3 - The Next Generation High Speed IGBT Family；EN501 KB10 May 2010
Additional Product Information
TitleSizeDateVersion
Nomenclature Guide IGBT Discretes and Diodes；EN478 KB27 Apr 201601_00
Press Release - Infineon Breaks Switching and Efficiency Limits with 3rd Generation High Speed 600 V and 1200 V IGBTs；EN88 KB05 May 2010
Application Brochure
TitleSizeDateVersion
Application Brochure Major Home Appliance；EN4.4 MB24 May 201601_00
Efficient Solutions for Industrial Motor Control and Drives；EN2 MB01 Mar 201401_00
Product Selection Guide
TitleSizeDateVersion
Selection Guide IGBT Discretes；EN989 KB12 Apr 201600_00
NEW! Power Management Selection Guide 2016；EN4.7 MB22 Feb 201600_00
Product Catalogue
TitleSizeDateVersion
Short Form Catalog - May 2016；EN4.4 MB09 May 201601_00
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_05-27-16_MA000960652_PG-TO263-3-2.pdf；EN24 KB31 Oct 201301_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Discrete IGBT - Altium - v2.0；EN926 KB20 Nov 201302_00
PCB Footprints & Symbols - Discrete IGBT - Cadence - v2.0；EN603 KB20 Nov 201302_00
PCB Footprints & Symbols - Discrete IGBT - Eagle - v2.0；EN117 KB20 Nov 201302_00
PCB Footprints & Symbols - Discrete IGBT - Mentor - v2.0；EN776 KB21 Nov 201302_00
Simulation Models
TitleSizeDateVersion
Simulation Model - PSpice IGBT 1200V HighSpeed 3；EN7 KB11 Jul 201300_05
Simulation Model - PSpice IGBT 600V HighSpeed 3；EN10 KB11 Jul 201301_00
Package Data
TitleSizeDateVersion
PG-TO263-3-2 | IGB30N60H3ATMA1；EN419 KB11 Apr 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Discrete IGBT - Altium - v2.0；EN926 KB20 Nov 201302_00
PCB Footprints & Symbols - Discrete IGBT - Cadence - v2.0；EN603 KB20 Nov 201302_00
PCB Footprints & Symbols - Discrete IGBT - Eagle - v2.0；EN117 KB20 Nov 201302_00
PCB Footprints & Symbols - Discrete IGBT - Mentor - v2.0；EN776 KB21 Nov 201302_00
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