MJD122:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

The devices are manufactured in planar technology with \"base island\" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Key Features

  • Low collector-emitter saturation voltage
  • Integrated antiparallel collector-emitter diode
Product Specifications
DescriptionVersionSize
DS0777: Complementary power Darlington transistors11.2576 KB
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
MJD122T4DPAKTape And Reel0.259500NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
MJD122T4DPAKIndustrialEcopack2 (**)md_dp-wspc-to-wspc-252-wspc-dpak_tldp-wspc-bb01s62.pdf
md_dp-wspc-to-wspc-252-wspc-dpak_tldp-wspc-bb01s62.xml
Complementary power Darlington transistors MJD122
md_dp-wspc-to-wspc-252-wspc-dpak_tldp-wspc-bb01s62.pdf MJD122
md_dp-wspc-to-wspc-252-wspc-dpak_tldp-wspc-bb01s62.xml MJD122