PD85025C:25W 13.6V 870MHz LDMOS in M243 ceramic package

The PD85025C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD85025C’s superior linearity performance makes it an ideal solution for mobile applications.

Key Features

  • Excellent thermal stability
  • Common source configuration
  • POUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V
  • BeO free package
  • ESD protection
  • In compliance with the 2002/95/EC european directive
Product Specifications
DescriptionVersionSize
DS5621: RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs2.1186 KB
Software Development Tools
Part NumberManufacturerDescription
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
PD85025CM243Loose Piece--NECEAR99MOROCCO
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
PD85025CM243IndustrialEcopack1
RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs PD85025C