STD4LN80K5:N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a DPAK package

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for application requiring superior power density and high efficiency.

Key Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected
Product Specifications
DescriptionVersionSize
DS11043: N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a DPAK package2.0809 KB
Application Notes
DescriptionVersionSize
AN4250: Fishbone diagram for power factor correction1.1772 KB
AN2842: Paralleling of power MOSFETs in PFC topology1.4896 KB
AN2344: Power MOSFET avalanche characteristics and ratings1.3880 KB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
Technical Notes & Articles
DescriptionVersionSize
TN1156: Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products1.0657 KB
User Manuals
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STD4LN80K5 PSpice model1.010 KB
Brochures
DescriptionVersionSize
Brochure Power management guide05.20164 MB
Software Development Tools
Part NumberManufacturerDescription
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STD4LN80K5DPAKTape And Reel--NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
STD4LN80K5DPAKIndustrialEcopack2
N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFET in a DPAK package STD4LN80K5
Fishbone diagram for power factor correction STWA3N170
Paralleling of power MOSFETs in PFC topology STWA3N170
Power MOSFET avalanche characteristics and ratings STWA3N170
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products STWA3N170
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STD4LN80K5
Very low drop voltage regulators with inhibit KFXX