STN3P6F6：P-channel 60 V, 0.13 Ohm typ., 3 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a SOT-223 package
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with
a new trench gate structure. The resulting Power MOSFET exhibits very low
RDS(on) in all packages.
Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Product Specifications
Application Notes
User Manuals
Brochures
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
Sample & Buy
| Part Number | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STN3P6F6 | SOT-223 | Tape And Reel | 0.7 | 1000 | NEC | EAR99 | CHINA |
Quality & Reliability
