NDD03N40Z: Power MOSFET 400V 2.1A 3.4 OHM Single N-Channel DPAK
Power MOSFET 400V 2.1A 3.4 OHM Single N-Channel DPAK
特性- 100% Avalanche Tested
- Extremely High dv/dt Capability
- Gate Charge Minimized
- Very Low Intrinsic Capacitance
- Improved Diode Reverse Recovery Characteristics
- Zener−protected
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
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仿真模型 (4)
封装图纸 (2)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NDD03N40Z-1G | Active | Pb-free
Halide free | IPAK-4 | 369D | 3 | Tube | 75 | $0.2503 |
| NDD03N40ZT4G | Active | Pb-free
Halide free | DPAK-3 | 369C | 3 | Tape and Reel | 2500 | $0.2503 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NDD03N40Z-1G | N-Channel | Single | 400 | 30 | 4.5 | 2.1 | 2 | | | 3400 | | 6.6 | | 452 | 140 | 17 | 3 |
| NDD03N40ZT4G | N-Channel | Single | 400 | 30 | 4.5 | 2.1 | 2 | | | 3400 | | 6.6 | | 452 | 140 | 17 | 3 |
