DS2045W

3.3V、单芯片、1Mb非易失SRAM

概述:
DS2045W是1Mb,可回流焊的非易失(NV) SRAM,由一个静态RAM (SRAM),一个NV控制器和一个内部可充电锰锂(ML)电池构成。这些元件封装在表贴模块内,采用256焊球BGA封装。模块VCC上电后,ML电池开始充电,SRAM由外部电源供电,SRAM内容可修改。VCC断电或超出容限时,控制器对SRAM的内容进行写保护,并由电池对SRAM供电。DS2045W还含有电源监控输出,/RST指示,可用作微处理器的CPU监视器.可用在工业控制器数据采集系统,RAID系统和服务器POS终端,路由器/交换器PLC.

The DS2045W is a 1Mb reflowable nonvolatile (NV) SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in a surface-mount module with a 256-ball BGA footprint. Whenever VCC is applied to the module, it recharges the ML battery, powers the SRAM from the external power source, and allows the contents of the SRAM to be modified. When VCC is powered down or out of tolerance, the controller write-protects the SRAM's contents and powers the SRAM from the battery. The DS2045W also contains a power-supply monitor output, RST-bar, which can be used as a CPU supervisor for a microprocessor.Applications:Data-Acquisition Systems,Fire Alarms,Gaming,Industrial Controllers,PLC,POS Terminals,RAID Systems and Servers,Router/Switches.

关键特性 Key Specifications:  Memory: EPROM, SRAM, EEPROM, ROM, NV SRAM
Part Number Memory Type Memory Size Bus Type DIP with Internal Battery PowerCap Package Battery Monitor With GPIO Single Piece Module Min. Supply (V) Max. Supply (V) Package Operating Temp. Range (°C) RoHS Available
DS2045W NV SRAM 128k x 8 Parallel No No No No Yes 3.0 3.6 256/MOD -40 to +85 Yes