SN65LVDM180 全双工 LVDM 收发器

The SN65LVDM180, SN65LVDM180, SN65LVDM050, and SN65LVDM051 are differential line drivers and receivers that use low-voltage differential signaling (LVDS) to achieve high signaling rates. These circuits are similar to TIA/EIA-644 standard compliant devices (SN65LVDS) counterparts, except that the output current of the drivers is doubled. This modification provides a minimum differential output voltage magnitude of 247 mV across a 50- load simulating two transmission lines in parallel. This allows having data buses with more than one driver or with two line termination resistors. The receivers detect a voltage difference of 50 mV with up to 1 V of ground potential difference between a transmitter and receiver.

The intended application of these devices and signaling techniques is point-to-point half duplex, baseband data transmission over a controlled impedance media of approximately 100 characteristic impedance

SN65LVDM180 SN65LVDM180 SN65LVDS179 SN65LVDS180
Input Signal LVDM, LVTTL   LVDM, LVTTL   LVDS, LVTTL   LVDS, LVTTL  
Output Signal LVDM, LVTTL   LVDM, LVTTL   LVDS, LVTTL   LVDS, LVTTL  
No. of Rx 1   1   1   1  
No. of Tx 1   1   1   1  
Signaling Rate(Mbps) 500TX/150RX   500TX/150RX   400TX/150RX   400TX/150RX  
Supply Voltage(s)(V) 3.3   3.3   3.3   3.3  
ICC(Max)(mA) 15   13   12   12  
Rx tpd(Typ)(ns) 3.7   3.7   3.7   3.7  
Tx tpd(Typ)(ns) 1.7   1.7   1.7   1.7  
Part-to-Part Skew(Max)(ps) 1000   1000      
Pin/Package 8MSOP, 8SOIC   14SOIC, 14TSSOP   8MSOP, 8SOIC   14SOIC, 14TSSOP  
Operating Temperature Range(°C) -40 to 85   -40 to 85   -40 to 85   -40 to 85  
ESD HBM(kV) 12   12   12   12  
Approx. Price (US$) 1.20 | 1ku   1.20 | 1ku   1.35 | 1ku   1.35 | 1ku
SN65LVDM180 特性
SN65LVDM180 芯片订购指南
器件 状态 温度 价格 封装 | 引脚 封装数量 | 封装载体 丝印标记
SN65LVDM180D ACTIVE -40 to 85 1.45 | 1ku SOIC (D) | 14 50 | TUBE  
SN65LVDM180DG4 ACTIVE -40 to 85 1.45 | 1ku SOIC (D) | 14 50 | TUBE  
SN65LVDM180DR ACTIVE -40 to 85 1.20 | 1ku SOIC (D) | 14 2500 | LARGE T&R  
SN65LVDM180DRG4 ACTIVE -40 to 85 1.20 | 1ku SOIC (D) | 14 2500 | LARGE T&R  
SN65LVDM180 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
SN65LVDM180D Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM SN65LVDM180D SN65LVDM180D
SN65LVDM180DG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM SN65LVDM180DG4 SN65LVDM180DG4
SN65LVDM180DR Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM SN65LVDM180DR SN65LVDM180DR
SN65LVDM180DRG4 Green (RoHS & no Sb/Br)  CU NIPDAU  Level-1-260C-UNLIM SN65LVDM180DRG4 SN65LVDM180DRG4
SN65LVDM180 应用技术支持与电子电路设计开发资源下载
  1. TI 德州仪器LVDS PHYs选型与价格 . xls
  2. 所选封装材料的热学和电学性质 (PDF 645 KB)
  3. 使用数字隔离器设计隔离式 I2C 总线接口 (zhct119.PDF, 339 KB)
  4. 1Q 2011 Issue Analog Applications Journal (slyt399.PDF, 964 KB)
  5. 接口选择指南 (Rev. D) (PDF 2994 KB)
  6. Signaling Rate vs. Distance for Differential Buffers (PDF 420 KB)
  7. Q1 2009 Issue Analog Applications Journal (slyt319.PDF, 1.39 MB)
  8. Isolated RS-485 Reference Design (PDF 80 KB)
  9. 无铅组件涂层的保存期评估 (PDF 1305 KB)
  10. Analog Signal Chain Guide (8.62 MB)
  11. Industrial Interface IC Solutions (101 KB)